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• W1967582956 abstract "This letter presents a simple method for transferring epitaxial sheets of graphene on silicon carbide to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing at 1550 °C in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Raman spectroscopy provided evidence that the transferred material is single layer. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ∼100 cm2/V-s, and negligible influence of resistance at the contacts." @default.
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• W1967582956 date "2009-11-16" @default.
• W1967582956 modified "2023-09-25" @default.
• W1967582956 title "Transfer of graphene layers grown on SiC wafers to other substrates and their integration into field effect transistors" @default.
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• W1967582956 doi "https://doi.org/10.1063/1.3263942" @default.
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