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- W1967589493 abstract "Depth profiles of the acceptor concentrations in disordered and undisordered silicon have been studied after recoil implantation of Al. The Si samples have been disordered by multiple ion implantation of He ions in the energy range from 30 to 150 keV. Recoil implantation has been carried out in the Al/Si(p) system using 100 keV Ar ions. These results have been compared with profiles after direct implantation of Al ions. The acceptor concentration profiles have been obtained from capacitance-voltage (C-V) measurements. Additionally the influence of the annealing on the X-ray diffraction patterns of Al/Si(p) systems has been investigated." @default.
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- W1967589493 date "1986-08-01" @default.
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- W1967589493 title "Electrically active recoil profiles of Al in silicon" @default.
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- W1967589493 doi "https://doi.org/10.1016/0168-583x(86)90451-9" @default.
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