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• W1967632895 abstract "An interface characterization of p-type GaSb metal-oxide-semiconductor (MOS) structures has been performed with Al-first and Hf-first HfAlO gate dielectrics deposited via atomic layer deposition. The Al-first process is found to improve the characteristic of high-k/GaSb MOS such as breakdown strength, frequency dispersion in accumulation region and gate dependent capacitance modulation. From temperature dependent conductance method, an interface trap density of 4 × 1012 cm−2 eV−1 near the valence band edge is extracted for Al-first HfAlO/GaSb. The border trap density is found to be 4.5 × 1019 cm−3 with a barrier height of 2.75 eV below the valence band edge of GaSb." @default.
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• W1967632895 date "2012-01-01" @default.
• W1967632895 modified "2023-09-26" @default.
• W1967632895 title "GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric" @default.
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• W1967632895 doi "https://doi.org/10.1149/2.001203esl" @default.
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