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- W1967648082 abstract "This paper presents an innovative, uncomplicated and inexpensive method based on a glass reflow process to fabricate glass-embedded passives for RF MEMS packaging. Experimental results show that various glass-embedded passives, including annular cylindrical and coaxial cylindrical conductive through-holes, plate and coaxial torus trench capacitors, square spiral, circular spiral and meander trench inductors, and filters, can be manufactured void-free with vertical and smooth sidewall and large signal pathways. This glass-embedded design implements passives with large thickness and provides much surface space for 3D MEMS integration. The HFSS simulation results show that a minor thickness increase contributes to a large increase in Q and a relatively small decrease in L. The best Q (38.9-83.9) and L (19.9-15 nH) were achieved by using square spiral inductors." @default.
- W1967648082 created "2016-06-24" @default.
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- W1967648082 date "2015-01-01" @default.
- W1967648082 modified "2023-09-23" @default.
- W1967648082 title "Preparation of wafer level glass-embedded high-aspect-ratio passives using a glass reflow process" @default.
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- W1967648082 doi "https://doi.org/10.1109/memsys.2015.7050981" @default.
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