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- W1967732078 abstract "Abstract Test structures were designed and processed to investigate the effect of retrograde wells on latch-up susceptibility. A 600 keV boron implantation was used to substitute a conventional 80 keV implant followed by a 1100°C, 105 min drive-in step. The well implantation was done at three different doses (5 × 1012 cm−2, 1 × 1013 cm−2 and 5 × 1013 cm−2). To meet requirements of a given CMOS process with respect to the surface concentration, an additional 140 keV boron implantation was performed for the retrograde well structures. The resulting concentration profiles were measured by SIMS. In order to characterize the structures electrically, the current gain of the parasitic bipolar transistors and the current voltage characteristics of the parasitic thyristor were measured for both well types. The structures with a retrograde well showed a reduction of the current gain by a factor of 3 in the case of the vertical and of 2 in the case of the lateral parasitic bipolar transitor. The threshold current Ith of the parasitic thyristor for a typical structure was 0.2 mA and 0.6 mA for the conventional and the retrograde well, respectively. The holding current Ih was 1.67 mA and 5.15 mA for the same structure." @default.
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- W1967732078 date "1995-03-01" @default.
- W1967732078 modified "2023-10-15" @default.
- W1967732078 title "Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility" @default.
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- W1967732078 doi "https://doi.org/10.1016/0168-583x(94)00530-3" @default.
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