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- W1967844891 abstract "The regularity of the effect of Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>-doped on the electrical properties of low voltage ZnO varistor was studied. The effects of annealing temperature on the electric characteristics of samples were discussed and the mechanism of Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>-doped was analyzed. It is found that the electric properties of Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>- doped samples are better than Bi<SUB>2</SUB>O<SUB>3</SUB>- and TiO<SUB>2</SUB>- doped samples, and the samples of Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>- doped can overcome the weakness of Bi<SUB>2</SUB>O<SUB>3</SUB> volatilization at high temperature. For 0.5mol% Bi<SUB>4</SUB>Ti<SUB>3</SUB>O<SUB>12</SUB>-doped samples sintered at 1280 degree(s)C for 2h, the electric properties were that V<SUB>1mA</SUB> equals 45v, (alpha) > 32, I<SUB>L</SUB> < 3 (mu) A." @default.
- W1967844891 created "2016-06-24" @default.
- W1967844891 creator A5040086262 @default.
- W1967844891 creator A5079580230 @default.
- W1967844891 date "2000-05-09" @default.
- W1967844891 modified "2023-10-16" @default.
- W1967844891 title "<title>Effects of Bi<formula><inf><roman>4</roman></inf></formula>Ti<formula><inf><roman>3</roman></inf></formula>O<formula><inf><roman>12</roman></inf></formula> doping on the electrical properties of low breakdown voltage ZnO varistors</title>" @default.
- W1967844891 doi "https://doi.org/10.1117/12.385524" @default.
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