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• W1968022272 abstract "The nature of yellow-band luminescence (YL) and donor–acceptor (DA) emissions of undoped GaN grown on sapphire or laterally overgrown on patterned Si3N4 was investigated using low-temperature photoluminescence and spatially resolved photoluminescence. The states, producing the levels responsible for the YL and DA emissions, arise from complexes of extended defects and native-point defects (most likely Ga vacancies) or impurities (such as carbon). For GaN directly grown on a low-temperature-grown GaN buffer layer, the YL and DA emissions can be eliminated by simply increasing the buffer-layer growth temperature as the result of enlarging hexagonal crystallites, and consequently, reducing the density of extended defects. For laterally overgrown GaN, a much lower density of extended defects substantially suppresses the YL emission." @default.
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• W1968022272 date "1999-05-10" @default.
• W1968022272 modified "2023-09-26" @default.
• W1968022272 title "Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN" @default.
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• W1968022272 doi "https://doi.org/10.1063/1.124025" @default.
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