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- W1968038585 abstract "In the rapid development of GaAs Quantum Well Infrared Photodetectors (QWIPs) we have fabricated a 1,024 x 1,024 (1K x 1K), 8-12 μm infrared focal plane array (FPA). This focal plane array is a hybrid using an L3 Cincinnati Electronics silicon readout integrated circuit (ROIC) bump bonded to the 1 megapixel GaAs QWIP. This effort was a collaboration of engineers at the Goddard Space Flight Center (GSFC), the Army Research Laboratory (ARL) and L3 Cincinnati Electronics (L3). We have integrated this focal plane into an SE-IR based imaging camera system and performed tests over the 55K-77K temperature range. As in previous developments the ease of fabrication of the GaAs array continues to be a valuable asset. The overall focal plane development costs are currently dominated by the costs associated with the silicon readout/hybridization. The GaAs array fabrication is based on a high yield, well-established GaAs processing capability. The broadband long wavelength response of this array combined with markedly improved quantum efficiency is of particular value in science applications where spectroscopy is required. One of the features of GaAs QWIP technology is the ability to precisely design and fabricate arrays responsive to a particular IR spectral region but the spectral response is typically only a few tenths of a micrometer wide limiting the spectral information content. By broadening the spectral response of this device the applications for imaging and spectroscopy are substantially increased. In this paper we will present the latest results of our corrugated 1K x 1K, 8-12 μm infrared focal plane array development including fabrication methodology, test data and experiments." @default.
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- W1968038585 date "2007-04-27" @default.
- W1968038585 modified "2023-10-02" @default.
- W1968038585 title "Development of a 1 megapixel long IR QWIP focal plane array" @default.
- W1968038585 doi "https://doi.org/10.1117/12.717224" @default.
- W1968038585 hasPublicationYear "2007" @default.
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