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- W1968049494 abstract "We study the influence of the lattice topology in the electronic properties of amorphous semiconductors, typically a-Si. The continuum random network is simulated by generating vacancies in an hexagonal gasket lattice where dangling bonds are eliminated by saturation. The electronic density of states and the ring statistics of the disorder lattice is studied using a real space renormalization technique within the context of the Green function formalism." @default.
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- W1968049494 date "1985-12-01" @default.
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- W1968049494 title "Electronic properties of amorphous semiconductors: Topology lattice effects" @default.
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- W1968049494 doi "https://doi.org/10.1016/0022-3093(85)90607-6" @default.
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