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- W1968099407 abstract "From the measurements of optical absorption spectra, we studied complexes generated by electron-irradiation of Czochralski-grown silicon (CZ.Si) pre-doped with hydrogen (H). Specimens were non-doped CZ.Si crystals with various concentrations of oxygen (O). They were doped with H by heating at 1300°C in H2 gas followed by quenching. They were then irradiated with 3-MeV electrons at room temperature. We measured their optical absorption spectra by a Fourier transform infrared spectrometer at about 7 K. In contrast to electron-irradiated floating-zone grown Si (FZ.Si) pre-doped with H, there was little optical absorption due to complexes of vacancies (V) and H. Instead, a 836 cm-1 peak due to a V–O pair was very strong. Its intensity was proportional to about 3/4 power of the electron dose. Optical absorption peaks due to complexes of H and I (self-interstitial) were stronger than those of FZ.Si. We propose that the observed 1959 cm-1 peak was due to I3H2. Due to annealing at around 100°C, VOH2 complexes were formed by reactions between V–O pairs and diffusing H2 molecules. Due to annealing at around 200°C, (VOH)2 complexes were formed probably by reactions between VOH2 complexes and diffusing V–O pairs." @default.
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- W1968099407 date "2002-06-15" @default.
- W1968099407 modified "2023-10-14" @default.
- W1968099407 title "Optical Absorption Study of Electron-irradiated Czochralski-grown Silicon Doped with Hydrogen" @default.
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- W1968099407 doi "https://doi.org/10.1143/jjap.41.3629" @default.
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