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- W1968109968 abstract "Abstract Minority carrier inversion layer solar cells on n-type single-crystal silicon substrates have been fabricated. The photovoltaic structure used consists of a p+ −n alloyed aluminium grid pattern with a layer of chemically vapour-deposited titanium oxide as the antireflection coating. The titanium oxide layer contains negative charges (of the order of 1012 cm−2) which can induce positive charges (holes) on the silicon surface and so cause inversion of the n-type substrate. A back surface field is obtained by heavily doping the back surface of the substrate with phosphorous which also provides the ohmic contact. An air mass 1 active area efficiency of 15.7% (13.6% total area efficiency) has been achieved with a 133 μm grid spacing on a 10–20 Ω cm polished single-crystal material. Similar efficiencies have also been obtained from rough-surface cells (i.e. with unpolished silicon surfaces)." @default.
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- W1968109968 date "1986-08-01" @default.
- W1968109968 modified "2023-09-27" @default.
- W1968109968 title "Alloyed inversion layer solar cells with n-Si substrates and TiOx antireflection coatings" @default.
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- W1968109968 doi "https://doi.org/10.1016/0040-6090(86)90297-x" @default.
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