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- W1968201209 abstract "Microdefects of different types in highly Si-doped GaAs single crystals grown by the horizontal Bridgman (HB) method were studied by means of X-ray diffuse scattering intensity measurements carried out with the help of a dispersion-free Bragg-type double-crystal spectrometer. It was shown that the predominant microdefects in GaAs crystals, Si-doped to the level of n=3 ×1018 cm-3, were the so-called interstitial point defect clusters consisting of single interstitials gathered in “clouds” whose mean radius varied from 0.1 to 0.4 μm. A not earlier observed proportionality law I∞(Δθ)-3 is seen on the linearized curve of angular dependence of X-ray diffuse intensity (I) scattered by the crystal doped to the level determined by the inequality n > 3 × 1018 cm-3. It was also shown that the angular dependence I ∞ (Δθ)-3 was due to the predominance of extrinsic dislocation loops with mean radius of ∼0.5 μm. Burgers vector determination was based on measuring of the angle corresponding to the X-ray intensity angular dependence transition from I∞(Δθ)-2 to I∞(Δθ)-3, where Δθ is the deviation of the angular position of the second crystal from the accurate Bragg angle." @default.
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- W1968201209 date "1989-09-01" @default.
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- W1968201209 title "X-ray diffuse scattering identification of interstitial atom aggregates in Si-doped GaAs single crystals" @default.
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- W1968201209 doi "https://doi.org/10.1016/0022-0248(89)90229-7" @default.
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