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- W1968218043 abstract "The charge transport properties of dendritic Ge thin films on glass substrates before and after postannealing have been studied by the methods of temperature-dependent electrical conductivity measurements and temperature-dependent Hall mobility measurements. Results showed that the dendritic structure is consistent with a crystalline matrix consisting of a high density of structural defects that cause degenerate conduction at high temperatures. Postannealing of the as-prepared samples at a temperature ensuremath{geqslant}570 ifmmode^circelsetextdegreefi{}C for 2 h succeeded in converting the degenerate conduction into a nondegenerate one. All the samples were found to be p-type in the low-temperature regime (20--100 K). The origin of the acceptorlike states within the forbidden gap was suggested to arise from dangling-bond-related defects, which could be partially removed by the prolonged annealing. Hall mobility $({ensuremath{mu}}_{H})$ data in the temperature range from 20 to 300 K revealed that the charge carriers were subjected to two kinds of scattering mechanisms. At low temperatures, ionized center scattering was found to dominate and ${ensuremath{mu}}_{H}$ showed a ${T}^{ensuremath{alpha}}$ dependence, where ensuremath{alpha} is a positive constant; while at higher temperatures ${ensuremath{mu}}_{H}$ was found to vary as ${T}^{ensuremath{-}0.5}$ rather than the expected ${T}^{ensuremath{-}3/2}$ dependence. This was explained in terms of a structural-imperfection-limited mean free path of the charge carriers." @default.
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- W1968218043 date "1998-12-15" @default.
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- W1968218043 title "Charge-transport properties of dendritic germanium thin films" @default.
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- W1968218043 doi "https://doi.org/10.1103/physrevb.58.16110" @default.
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