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- W1968220206 abstract "In this study, an analytical direct tunneling gate current model for long-channel undoped cylindrical surrounding gate (CSG) MOSFETs is developed. On the basis of an analytical model, the direct tunneling gate current in CSG MOSFETs is investigated. It is found that direct tunneling gate current is a strong function of gate oxide thickness, but less affected by the change in channel radius. It is also revealed that considering the influence of the source and drain, as the length of the underlap region decreases to zero, the direct tunneling gate current drastically increases. The accuracy of the analytical model is verified by the good agreement of its results with those obtained by the three-dimensional numerical device simulator ISE." @default.
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- W1968220206 date "2013-01-30" @default.
- W1968220206 modified "2023-09-26" @default.
- W1968220206 title "Analytical Model for Direct Tunneling Gate Current in Long-Channel Undoped Cylindrical Surrounding Gate Metal–Oxide–Semiconductor Field Effect Transistors" @default.
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- W1968220206 doi "https://doi.org/10.7567/jjap.52.024302" @default.
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