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- W1968262280 abstract "We report on the fabrication and the characterization of low-intensity ultraviolet (UV) photodetectors based on Al x Ga 1- x N grown by organometallic vapor phase epitaxy, with threading dislocation density in the range of 5–8×10 9 to 2×10 11 cm -2 and 6–7×10 7 to 1×10 9 cm -2 . The detectors present dark current values below 100 fA at 10 V bias allowing a photocurrent to dark current ratio greater than one even at 40 nW/cm 2 . The photodetectors fabricated on low-density dislocation layers present a greatly reduced persistent photoconductivity. Also, they achieved a rejection ratio of 3 orders of magnitude between UV and visible light with cutoffs at 365 and 270 nm for x =0 and x =0.43, respectively." @default.
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- W1968262280 date "1999-05-01" @default.
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- W1968262280 title "Low-Intensity Ultraviolet Photodetectors Based on AlGaN" @default.
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