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• W1968265536 abstract "The nature of a striking pattern of extended defects formed by very high dose implantation of helium in a complex oxide, for example, ferroelectric$z$-cut LiNbO${}_{3}$, is studied. After irradiation, a high concentration of defects is found to collect and create a network of thick prismatic planar defects, which have typical dimensions of ensuremath{sim}1.5 ensuremath{mu}m and 200 nm parallel and perpendicular to the $z$ axis, respectively. This defect network and its effect on the lattice were studied using a set of x-ray and electron microscopy probes of the lattice structure and spatial variation. Optical microscopy shows that there is strong temperature dependence for forming the network; the density of these extended defects reaches a maximum value for an annealing temperature of 250 ifmmode^circelsetextdegreefi{}C but is fully eliminated by a temperature of 380 ifmmode^circelsetextdegreefi{}C. High-resolution transmission electron microscopy studies indicate that these extended defects are probably localized twinning and dislocation pileups due to plastic deformation of the lattice to relieve He-implantation-induced stress. During this deformation, He accumulates at the twin boundaries. The study also shows that the He interstitials evolve into bubbles causing high stress and resulting in a formation of thick prismatic planar defects. Finally, a mechanism is proposed for defect creation and elimination." @default.
• W1968265536 created "2016-06-24" @default.
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• W1968265536 date "2011-02-14" @default.
• W1968265536 modified "2023-10-18" @default.
• W1968265536 title "Twinning and dislocation pileups in heavily implanted LiNbO<mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>" @default.
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• W1968265536 doi "https://doi.org/10.1103/physrevb.83.064104" @default.
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