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- W1968312270 abstract "Degradation of SiO2 surface passivation for 4H-SiC power bipolar junction transistors (BJTs) as a result of ion irradiation has been studied to assess the radiation hardness of these devices. Fully functional BJTs with 2700 V breakdown voltage are implanted with 600 keV helium ions at fluences ranging from 1 ×1012 to 1 ×1016 cm-2 at room temperature. These ions are estimated to reach the SiO2/ SiC interface. The current-voltage characteristics before and after irradiation show that the current gain of the devices starts degrading after a helium fluence of 1×1014 cm-2 and decreases up to 20% for the highest fluence of ions. Simulations show that the helium ions induce ionization inside the SiO2, which increases the interface charge and leads to a degradation of the BJT performance. Thermal annealing of the irradiated devices at 300 °C, 420 °C, and 500 °C further increases the amount of charge at the interface, resulting in increased base current in the low-voltage range." @default.
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- W1968312270 date "2012-12-01" @default.
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- W1968312270 title "Impact of Ionizing Radiation on the $hbox{SiO}_{2}/ hbox{SiC}$ Interface in 4H-SiC BJTs" @default.
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- W1968312270 doi "https://doi.org/10.1109/ted.2012.2222414" @default.
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