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- W1968453536 abstract "Fast turn-off of high-voltage (breakdown voltage 3 kV) 4H‐SiC npn bipolar junction transistors driven in a deeply saturated regime has been reported. In the conventional turn-off mode (base current break), the turn-off delay and current fall times are 80 ns and 100 ns, respectively. It is shown that these times can be made as short as 20 and 4 ns, respectively, if a reverse base current pulse of appropriate amplitude is applied to sweep out minority carriers from the base. The experimental values of delay and turn-off times well coincide with those calculated in terms of the charge control model." @default.
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- W1968453536 date "2010-03-23" @default.
- W1968453536 modified "2023-10-18" @default.
- W1968453536 title "Fast turn-off of high voltage 4H–SiC npn BJTs from the saturation on-state regime" @default.
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- W1968453536 doi "https://doi.org/10.1088/0268-1242/25/4/045030" @default.
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