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- W1968482903 abstract "Crystallization process of the low-temperature-deposited AlN buffer layer on sapphire, and atomic step motion of the crystallized AlN has been observed in situ by TEM. Insertion of the second low-temperature-deposited buffer layer between high-temperature-grown GaN is found to reduce threading dislocations and to eradicate etch-pit formation." @default.
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- W1968482903 date "1999-03-01" @default.
- W1968482903 modified "2023-09-27" @default.
- W1968482903 title "Growth of GaN on highly mismatched substrate and its application to novel devices" @default.
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- W1968482903 doi "https://doi.org/10.1016/s0925-9635(98)00264-7" @default.
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