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- W1968492561 abstract "Abstract Resonant enhancement is observed in first and second order Raman scattering in the “forbidden” scattering geometry for a thin-period MBE-grown GaAs AlGaAs superlattice sample. The first order spectra consist of three GaAs-type and one AlAs-type optic phonons. The laser energy ranges around the first HHl excitonic level of the GaAs quantum well lying just below the quantum well top. Simple treatment of the scattering intensities for first order phonons enables us to deduce the characteristic behaviour of the electronic susceptibility ζ(E) of the intermediate electronic states lying near the quantum well top. By comparing the semi-experimentally deduced ζ(E) with that acceptable from 1-, 2- and 3-dimensional models of the electronic density of states ϱ(hω), we conclude that in the vicinity of Q-well's top ϱ(hω) should be described by the 3-D model." @default.
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- W1968492561 date "1987-01-01" @default.
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- W1968492561 title "Superlattice electronic density of states near the Q-well's top" @default.
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- W1968492561 doi "https://doi.org/10.1016/0749-6036(87)90050-4" @default.
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