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- W1968495989 abstract "The Schottky barrier height of sputtered TiN on both p- and n-type silicon was determined by I-V and C-V measurements. The barrier height is found to increase on n-Si and to decrease on p-Si, upon thermal annealing. The experimental results are explained in terms of sputtering damage. This damage is modeled by donor-like traps whose concentration decays exponentially from the silicon surface. A characteristic length equal to 45 Å accounts for the observed characteristics. The trap-free values of the barrier height were obtained by I-V measurements after sequential thermal annealing up to 600°C. These values are φBn = 0.55 V on n-type and φBp = 0.57 V on p-type silicon." @default.
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- W1968495989 date "1984-07-01" @default.
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- W1968495989 title "Schottky barrier height of sputtered TiN contacts on silicon" @default.
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- W1968495989 doi "https://doi.org/10.1016/0038-1101(84)90131-x" @default.
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