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- W1968526232 abstract "Epitaxial growth in hydrogen atmosphere has been studied in relation to sublimation epitaxial growth. A new type of features with a hexagonal shape are observed in the layers grown in hydrogen atmosphere. The morphological details of the features have been studied with optical microscopy and atomic force microscopy. An interactive relation of the defect appearance with the step flow growth mode seems to be present. The results are compared with growth in vacuum, argon, and helium conditions. The possible influence of thermal component to a reactive one in hydrogen etching is discussed." @default.
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- W1968526232 date "2005-02-01" @default.
- W1968526232 modified "2023-09-26" @default.
- W1968526232 title "Fast epitaxy by PVT of SiC in hydrogen atmosphere" @default.
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- W1968526232 doi "https://doi.org/10.1016/j.jcrysgro.2004.11.129" @default.
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