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- W1968544955 abstract "This paper reports the growth, materials characterization, and device performance of lattice-matched GaInAsSb/GaSb thermophotovoltaic (TPV) devices with cutoff wavelength extended from 2.3 to 2.5 μm. GaInAsSb epilayers were grown lattice matched to GaSb substrates by organometallic vapor phase epitaxy using all organometallic precursors including triethylgallium, trimethylindium, tertiarybutylarsine, and trimethylantimony with diethyltellurium and dimethylzinc as the n- and p-type dopants, respectively. The growth temperature was 525 °C. Although these alloys are metastable, a mirror-like surface morphology and room-temperature photoluminescence (PL) are obtained for alloys with PL peak emission at room temperature as long as 2.5 μm. Lattice-matched GaInAsSb/GaSb TPV devices exhibit internal quantum efficiency as high as 90% for devices with a cutoff wavelength of 2.5 μm. The open circuit voltage for extended wavelength devices is 239 mV at 3.6 A/cm2." @default.
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- W1968544955 date "1999-01-01" @default.
- W1968544955 modified "2023-09-26" @default.
- W1968544955 title "Extending the cutoff wavelength of lattice-matched GaInAsSb/GaSb thermophotovoltaic devices" @default.
- W1968544955 doi "https://doi.org/10.1063/1.57805" @default.
- W1968544955 hasPublicationYear "1999" @default.
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