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• W1968592465 abstract "Abstract Helicon‐wave‐excited plasma sputtering (HWPS) method was used to deposit CuAlO 2 films on (0001) Al 2 O 3 substrates at 700–800 °C for the first time. For the films deposited at 700 °C, the best full‐width at half‐maximum (FWHM) value of the (006) CuAlO 2 X‐ray diffraction peak was 0.19 degrees, which was smaller than those reported previously using other deposition methods. The HWPS method was shown to have technical importance in developing p ‐type TCO films, as it seldom damage the film surface. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W1968592465 date "2008-07-01" @default.
• W1968592465 modified "2023-10-16" @default.
• W1968592465 title "Helicon‐wave‐excited plasma sputtering deposition of CuAlO ₂ thin films" @default.
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• W1968592465 doi "https://doi.org/10.1002/pssc.200779181" @default.
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