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• W1968608548 abstract "A major concern in the development of microelectromechanical systems (MEMS) is the presence of residual stress. Residual stress, which is produced during the fabrication of multi-layer thin-film structures, can significantly affect the performance of microscale devices. Though experimental measurement techniques are accurate, actual stress measurements can vary dramatically from run to run and wafer to wafer. For this reason, modeling of this stress is a challenging task. Past work has focused on experimental, static techniques for determining residual stress levels in single-layer and bi-layer structures. In this effort, two different experimental techniques are used for determining residual stress levels in four-layer piezoelectrically driven cantilever and clamped-clamped structures. One of the techniques is based on wafer bow measurements, and the other technique is a dynamic technique that is based on parameter identification from nonlinear frequency-response data. The devices studied, which consist of a piezoelectric layer or lead zirconate titanate (PZT) layer, are fabricated with varying lengths, widths, and material layer thickness. The results obtained from the static and dynamic techniques are compared and discussed." @default.
• W1968608548 created "2016-06-24" @default.
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• W1968608548 date "2006-01-01" @default.
• W1968608548 modified "2023-09-30" @default.
• W1968608548 title "Static and Dynamic Techniques for Residual Stress Measurements in Microelectromechanical Systems" @default.
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• W1968608548 doi "https://doi.org/10.1115/imece2006-14055" @default.
• W1968608548 hasPublicationYear "2006" @default.
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