Matches in SemOpenAlex for { <https://semopenalex.org/work/W1968652268> ?p ?o ?g. }
Showing items 1 to 58 of
58
with 100 items per page.
- W1968652268 abstract "By using a new method, which we have named the LESS technique (lateral epitaxy by seeded solidification), single‐crystal Si films have been grown over insulating layers on single‐crystal Si substrates. An amorphous or polycrystalline Si film is deposited on the insulating layer, in which narrow stripes have been opened to expose the substrate. By using two carbon strip heaters, one of which is movable, the Si film is melted and frozen in such a manner that solidification begins within the stripe openings, where it is seeded by the substrate. The resulting single‐crystal regions in turn seed lateral single‐crystal growth over the adjacent insulating layer. Continuous single‐crystal Si films have been obtained over SiO2 layers with openings spaced 50 or 500 mm apart, and single‐crystal growth extending as far as 4 mm over Si3N4 has been observed." @default.
- W1968652268 created "2016-06-24" @default.
- W1968652268 creator A5018861794 @default.
- W1968652268 creator A5084571182 @default.
- W1968652268 creator A5087447764 @default.
- W1968652268 date "1980-01-01" @default.
- W1968652268 modified "2023-09-23" @default.
- W1968652268 title "Lateral epitaxy by seeded solidification for growth of single-crystal Si films on insulators" @default.
- W1968652268 doi "https://doi.org/10.1109/iedm.1980.189977" @default.
- W1968652268 hasPublicationYear "1980" @default.
- W1968652268 type Work @default.
- W1968652268 sameAs 1968652268 @default.
- W1968652268 citedByCount "1" @default.
- W1968652268 crossrefType "proceedings-article" @default.
- W1968652268 hasAuthorship W1968652268A5018861794 @default.
- W1968652268 hasAuthorship W1968652268A5084571182 @default.
- W1968652268 hasAuthorship W1968652268A5087447764 @default.
- W1968652268 hasConcept C110738630 @default.
- W1968652268 hasConcept C127413603 @default.
- W1968652268 hasConcept C146978453 @default.
- W1968652268 hasConcept C159985019 @default.
- W1968652268 hasConcept C185592680 @default.
- W1968652268 hasConcept C192562407 @default.
- W1968652268 hasConcept C26456737 @default.
- W1968652268 hasConcept C2779227376 @default.
- W1968652268 hasConcept C36248471 @default.
- W1968652268 hasConcept C49040817 @default.
- W1968652268 hasConcept C544956773 @default.
- W1968652268 hasConcept C8010536 @default.
- W1968652268 hasConceptScore W1968652268C110738630 @default.
- W1968652268 hasConceptScore W1968652268C127413603 @default.
- W1968652268 hasConceptScore W1968652268C146978453 @default.
- W1968652268 hasConceptScore W1968652268C159985019 @default.
- W1968652268 hasConceptScore W1968652268C185592680 @default.
- W1968652268 hasConceptScore W1968652268C192562407 @default.
- W1968652268 hasConceptScore W1968652268C26456737 @default.
- W1968652268 hasConceptScore W1968652268C2779227376 @default.
- W1968652268 hasConceptScore W1968652268C36248471 @default.
- W1968652268 hasConceptScore W1968652268C49040817 @default.
- W1968652268 hasConceptScore W1968652268C544956773 @default.
- W1968652268 hasConceptScore W1968652268C8010536 @default.
- W1968652268 hasLocation W19686522681 @default.
- W1968652268 hasOpenAccess W1968652268 @default.
- W1968652268 hasPrimaryLocation W19686522681 @default.
- W1968652268 hasRelatedWork W1986301779 @default.
- W1968652268 hasRelatedWork W1988835783 @default.
- W1968652268 hasRelatedWork W2003658924 @default.
- W1968652268 hasRelatedWork W2005523233 @default.
- W1968652268 hasRelatedWork W2014495521 @default.
- W1968652268 hasRelatedWork W2059986347 @default.
- W1968652268 hasRelatedWork W2079258571 @default.
- W1968652268 hasRelatedWork W2084091054 @default.
- W1968652268 hasRelatedWork W2098206083 @default.
- W1968652268 hasRelatedWork W3206623140 @default.
- W1968652268 isParatext "false" @default.
- W1968652268 isRetracted "false" @default.
- W1968652268 magId "1968652268" @default.
- W1968652268 workType "article" @default.