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- W1968695714 abstract "Mechanism of open-circuit voltage enhancement in Au thin oxide-n-GaAs (1̄1̄1̄) solar cells prepared by room-temperature wet oxidation has been studied. In contrast to earlier published results on (100) GaAs, barrier heights for metal-insulator-semiconductor and metal-semiconductor cells are found to be the same, indicating absence of charge in the oxide or significant modification of surface states. It is shown that the increase in open-circuit voltage is mainly caused by suppression of the majority-carrier current due to tunneling through the oxide." @default.
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- W1968695714 date "1982-01-01" @default.
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- W1968695714 title "Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cells" @default.
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- W1968695714 doi "https://doi.org/10.1063/1.92912" @default.
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