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- W1968835087 abstract "Polycrystalline thin films of Fe 3− x Zn x O 4 ( x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe 3 O 4 thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn 2+ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe 3 O 4 on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T 2g 1 , T 2g 3 , T 2g 2 , and A 1g at 193, 304, 531 and 668 cm −1 . It is noticed that the frequency positions of the strongest A 1g mode are at 668.3 cm −1 , for all parent Fe 3 O 4 thin film shifted at lower wave number as 663.7 for Fe 2.98 Zn 0.02 O 4 thin film on Si (1 1 1) substrate. The integral intensity at 668 cm −1 increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface." @default.
- W1968835087 created "2016-06-24" @default.
- W1968835087 creator A5086086059 @default.
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- W1968835087 date "2014-11-01" @default.
- W1968835087 modified "2023-10-16" @default.
- W1968835087 title "Structural and electrical transport properties of Zn Fe3−O4 thin film deposited on Si (1 1 1) by pulsed-laser deposition" @default.
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- W1968835087 doi "https://doi.org/10.1016/j.ijleo.2014.08.119" @default.
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