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• W1968895908 abstract "Atomic-scale positional resolved lattice spacing measurement is used to study the In concentration of the alloy layer in InAs/In x Ga 1− x Sb superlattices by the molecular beam epitaxy techniques. The unstrained lattice distance d along three directions, [0 0 1], [1 1 0] and [1 1 1], was measured and the average lattice constant was calculated. The experimental lattice constants of InAs layers are almost equal to the theoretical ones. We have found that the average lattice constant of In 0.25 Ga 0.75 Sb alloy layers is in good agreement with previously reported Vegard's values, being slightly larger. The results indicate that the In concentration of x = 0.18 has a larger deviation compared with the designed values." @default.
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• W1968895908 date "2010-07-29" @default.
• W1968895908 modified "2023-10-18" @default.
• W1968895908 title "Evaluation of the In concentration of an In_xGa_1−xSb alloy layer in cross-sectional HRTEM images of III–V semiconductor superlattices" @default.
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• W1968895908 doi "https://doi.org/10.1088/0022-3727/43/32/322001" @default.
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