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- W1968982992 abstract "An analytic solution of the problem of a hydrogenic atom in a homogeneous dielectric medium with a concentric spherical cavity (cavity model) is presented. This soluble model has the virtue that it exhibits the shallow-deep instability of impurity levels in semiconductors as a function of the impurity ion charge $mathrm{Ze}$ and the cavity radius. The shallow-deep instability involves a transition from large orbitals in the dielectric medium to small orbitals in the cavity, with the cavity being analogous to an interstitial site in a crystal lattice. The shallow-deep instability is illustrated graphically. Our solution indicates that interstitial fractional charge impurities like quarks could give rise to shallow electronic impurity levels in silicon and germanium while the known electronic ground states associated with interstitial protons and antimuons (treated by Wang and Kittel) in these semiconductors are deep." @default.
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- W1968982992 date "1984-09-15" @default.
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- W1968982992 title "Analytic solution of the cavity model for interstitial impurities in semiconductors" @default.
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- W1968982992 doi "https://doi.org/10.1103/physrevb.30.3338" @default.
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