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- W1969000002 abstract "ZnO/InP(110) samples prepared as light emission sources are explored by X-ray diffraction to characterize structural changes induced by annealing in the range of 450 to 700 °C for 3 min. Metallic indium is created between the ZnO thin film and the InP substrate as a result of annealing. Pole figure measurements reveal that the most densely populated planes In{101} and InP{111} are oriented parallel and a common symmetry plane exists being perpendicular to the above-mentioned planes and simultaneously parallel to an InP{110} and an In{100} plane. Moreover, the two types of InP{111} interface (In or P) are not found equally good for In Growth. ZnO/InP Proben hergestellt als Lichtemissionsquellen werden 3 min bei 450 bis 700 °C geglüht und die dadurch hervorgerufenen Änderungen röntgenografisch aufgeklärt. Durch die Glühung entsteht metallisches In zwischen der ZnO-Schicht und dem InP-Substrat. Die Texturmessungen zeigen folgende Epitaxie: Die dichtest besetzten Ebenen in beiden Kristallen InP{111} und In{101} sind parallel ebenso wie die darauf senkrecht stehenden Ebenen InP{1110} und In{010}, die eine gemeinsame Symmetrieebene bilden. InP{111} und InP{111} sind dabei nicht gleichwertig für das epitaktische Wachstum." @default.
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- W1969000002 date "1996-02-16" @default.
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- W1969000002 title "Epitaxial character of in growth at annealed ZnO/InP(110) interfaces" @default.
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- W1969000002 doi "https://doi.org/10.1002/pssa.2211530212" @default.
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