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Matches in SemOpenAlex for { <https://semopenalex.org/work/W1969026051> ?p ?o ?g. }

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• W1969026051 abstract "The degradation of inversion-layer electron and hole mobility in silicon MOS devices by interface charge at 295 and 77 K is discussed. The charge was controllably introduced using cesium implanted into the gate oxide and subsequently diffused to the oxide-substrate interface. The charged-impurity-scattering component of the mobility has been extracted and characterized as a function of inversion charge density and cesium dose.< <ETX xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>></ETX>" @default.
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• W1969026051 date "1989-01-01" @default.
• W1969026051 modified "2023-09-27" @default.
• W1969026051 title "Characterization of surface mobility in MOS structures containing interfacial cesium ions" @default.
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• W1969026051 doi "https://doi.org/10.1109/16.21184" @default.
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