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- W1969047027 abstract "We report on the heteroepitaxial growth of 3C-SiC layers by a vapor–liquid–solid (VLS) mechanism on various α-SiC substrates, namely, on- and off-axis for both 4H- and 6H-SiC(0001), Si and C faces. The Si-Ge melts, in which the Si content was varied from 10 to 50 atom%, were fed by 3 sccm of propane. The growth temperature was varied from 1200 to 1600 °C. It was found that single domain 3C-SiC layers can be obtained on 6H-SiC off- and on-axis and 4H-SiC on-axis, while the other types of substrates gave twinned 3C-SiC materials. As a general rule, one has to increase temperature when decreasing the Si content of the melt to avoid twin formation. It was also found that twinned 3C-SiC layers form at low temperatures, while homoepitaxy is achieved at high temperatures. Some growth mechanisms are proposed to explain the possibility of achieving either homoepitaxial or 3C-SiC layers (twinned or twin free) by changing the growth conditions. Concerning the selection of one orientation of the 3C layer for twin eli..." @default.
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- W1969047027 date "2008-01-23" @default.
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- W1969047027 title "Vapor–Liquid–Solid Growth of 3C-SiC on α-SiC Substrates. 1. Growth Mechanism" @default.
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