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• W1969147017 abstract "A PECVD process for WNx deposition was developed to deposit ultrathin films of 10-nm thickness using a WF6–N2–H2 gas mixture. This paper deals with the influence of several process parameters such as temperature, RF power and gas flows on the deposition rate. For a stable deposition process of ultrathin films, a low deposition rate with controllable parameters is required. All deposited WNx films have a X-ray amorphous microstructure and the fluorine content in the film is very low. Their electrical resistivity is around 200 μΩ cm and almost independent of the film composition and the film thickness. This is why it is a promising diffusion barrier." @default.
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• W1969147017 date "2002-10-01" @default.
• W1969147017 modified "2023-09-28" @default.
• W1969147017 title "Development of PECVD WNx ultrathin film as barrier layer for copper metallization" @default.
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• W1969147017 doi "https://doi.org/10.1016/s0167-9317(02)00798-0" @default.
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