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- W1969162387 abstract "Synchrotron-radiation photoemission studies of Xe-atom physisorption at 35 K on cleaved GaAs(110) surfaces reveal the presence of a single first-layer adsorption site, followed at increasing coverage by the formation of a close-packed Xe second layer incommensurate with the substrate. Sizable binding-energy shifts of the Xe 4d and 5p levels from first to second adsorbed layer suggest non-negligible final-state screening of the photoemission-induced core hole by the GaAs substrate. Results for Xe atoms adsorbed on HgTe(110) and ${mathrm{Hg}}_{1mathrm{ensuremath{-}}mathit{x}}$${mathrm{Cd}}_{mathit{x}}$Te(110) cleaved semiconductor surfaces show a similar initial adsorption site on all such surfaces, corresponding to an identical Xe 4d ionization energy of 66.3ifmmodepmelsetextpmfi{}0.1 eV. We associate this common behavior to initial Xe adsorption at the high-coordination, fourfold-hollow site formed by anions on the (110) cleavage plane." @default.
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- W1969162387 date "1992-08-15" @default.
- W1969162387 modified "2023-09-27" @default.
- W1969162387 title "Photoemission study of adsorbed Xe on GaAs(110), HgTe(110), andHg1−xCdxTe(110) surfaces" @default.
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- W1969162387 doi "https://doi.org/10.1103/physrevb.46.4102" @default.
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