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- W1969236448 abstract "This paper provides a theoretical study of recombination at the grain boundary (GB) in polysilicon under optical illumination. The model is based on the assumptions of a Gaussian energy distribution of the GB interface states and the acceptor- and donor-like interface states, and unequal capture cross sections of these GB states for electrons and holes in polycrystalline materials. With the condition that we consider the GB material as amorphous silicon, which means that the bandwidth is about 1.5 eV, the dependence of the GB potential barrier height ({V}g), interface and effective recombination velocities of minority carriers at the edge of space-charge regions ({S}(0), {S}({w})) and interface recombination current density ({J}R(0)) on the illumination level is investigated. Furthermore, the influence of different dopant concentration in the grain ({N}d) on the parameters ({S}(0), {S}({w}), {J}R(0)) is also investigated. The results indicate that {S}(0), {S}({w}) and {J}R(0) increase with increasing {N}d under identical illumination levels (Δ{E}f)." @default.
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- W1969236448 date "2000-08-15" @default.
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- W1969236448 title "Recombination properties of grain boundaries in polycrystalline silicon under illumination" @default.
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- W1969236448 doi "https://doi.org/10.1088/0268-1242/15/9/309" @default.
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