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- W1969389492 abstract "Results of boron delta-doped-channel (DDC) field-effect transistors fabricated on Si 0.7 Ge 0.3 /Si strained-layer heterostructures grown by solid-source molecular beam epitaxy (SSMBE) are reported. A device with a 1×100 µm 2 gate exhibits an extrinsic transconductance as high as 22 mS/mm. Due to the absence of parallel conduction effects under high-current-level operation in this device, as compared to a modulation-doped structure, a wide and flat range of uniform g m distribution of 4.5 V together with a high gate-to-drain breakdown voltage (>25 V) and high current density of 120 mA/mm is obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications." @default.
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- W1969389492 date "2000-11-01" @default.
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- W1969389492 title "Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors" @default.
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- W1969389492 doi "https://doi.org/10.1143/jjap.39.l1149" @default.
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