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- W1969466617 abstract "The most outstanding feature observed for dopants in hydrogenated amorphous silicon---a shift in the Fermi level accompanied by an increase in the charged-defect density---has previously been postulated to stem from the formation of substitutional-dopant--dangling-bond complexes. Using first-principles self-consistent pseudopotential calculations in conjunction with a supercell model for the amorphous network and the ability of network relaxation from the first-principles results, we have studied the electronic and structural properties of substitutional fourfold-coordinated phosphorus and boron at the second-neighbor position to a dangling-bond defect. We demonstrate that such impurity-defect complexes can account for the general features observed experimentally." @default.
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- W1969466617 date "1991-06-24" @default.
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- W1969466617 title "Impurity-defect complexes and doping mechanism in<i>a</i>-Si:H" @default.
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- W1969466617 doi "https://doi.org/10.1103/physrevlett.66.3273" @default.
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