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- W1969550480 abstract "Band to band tunneling (BTBT) is a major challenge in Ge FinFETs due to its smaller band gap. Reduction in BTBT by quantum-confinement (QC) based increase in band-gap requires narrow Wfin. However, Line Edge Roughness (LER) on narrow fins causes large V T variability. Improved fin-width process e.g. SADP [1], ALE [2] have been proposed to reduce LER. Alternatively, variability resistant transistor design has been recently proposed with thin Ge on Si highly retrograde doped fins by our group [3], which also provides multiple V T capability - a major challenge in FinFETs. However, this has 2 challenges - (i) thickness limitation of <; 2nm of defect-free Ge on Si and (ii) RDF in the retrograde doped fins. In this study, we propose a dual-gate structure like FinFET by epitaxially growing undoped Ge /rare earth oxide (e.g. Gd 2O 3) [4] stack on highly doped Si fins. By statistical simulations, we show that this structure can reduce LER based variability by more than 90% in comparison to FinFETs at a similar performance. RDF is negligible due to the undoped Ge channel. Thicker (>2nm) defect-free Ge can be grown epitaxially on Gd 2O 3 [4]. We show the multi-V T capability enabled by independent back-gate biasing, and hence provides a significant advantage over FinFETs. Experimental data from MOSCAP with epi Gd 2O 3 as gate dielectric (~ 4.5 nm) show lower leakage currents than LSTP specification." @default.
- W1969550480 created "2016-06-24" @default.
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- W1969550480 date "2014-06-01" @default.
- W1969550480 modified "2023-09-26" @default.
- W1969550480 title "Epitaxial rare earth oxide (EOx) FinFET: A variability-resistant Ge FinFET architecture with multi V<inf>T</inf>" @default.
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- W1969550480 doi "https://doi.org/10.1109/drc.2014.6872315" @default.
- W1969550480 hasPublicationYear "2014" @default.
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