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- W1969576720 endingPage "2098" @default.
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- W1969576720 abstract "In many ceramic systems thin amorphous films of about 1 nm thickness often cover grain boundaries. These amorphous films play a key role not only in the formation of microstructures but also in the thermal-mechanical properties of ceramic materials. However, such thin amorphous layers could not be probed directly by an analytical electron beam. With the recent advances in spatially-resolved electron energy-loss spectroscopy technique, chemical and physical parameters of the thin films could be successfully derived using the “spectrum separation” approach. Basic characters and behaviors of variations for the inter-granular films are analyzed in a few silicon nitride (Si3N4) and silicon carbide (SiC) systems. The combined local chemical-structural information reveal new trends on microstructures and properties, and provides further insights in Si-based ceramic materials." @default.
- W1969576720 created "2016-06-24" @default.
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- W1969576720 date "2004-01-01" @default.
- W1969576720 modified "2023-10-16" @default.
- W1969576720 title "Electron Energy-loss Spectroscopy Characterization of ∼1 nm-thick Amorphous Film at Grain Boundary in Si-based Ceramics" @default.
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- W1969576720 doi "https://doi.org/10.2320/matertrans.45.2091" @default.
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