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• W1969583539 abstract "Fully-depleted tri-gate oxide-nitride-oxide (ONO) transistor memory cells with very short gate lengths in the range L/sub G/ = 30 - 80 nm have been fabricated for the first time. The devices show very good electrical characteristics and have been optimized successfully for high density applications. A NAND-type array organization is proposed and solutions to integration issues are given. In addition, high resolution scanning spreading resistance microscopy has been used to visualize the On-state of a tri-gate memory device." @default.
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• W1969583539 date "2004-01-01" @default.
• W1969583539 modified "2023-09-26" @default.
• W1969583539 title "Sub-40nm tri-gate charge trapping nonvolatile memory cells for high-density applications" @default.
• W1969583539 doi "https://doi.org/10.1109/vlsit.2004.1345504" @default.
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