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- W1969594671 abstract "GaAs layers were grown by MOCVD under “optimum” conditions on substrates containing structural defects which are most commonly encountered in variously doped, LEC and HB grown, bulk GaAs crystals. The structure of the (homo-)epitaxial samples was investigated by sequent DSL photoetching. Dislocations of various types were generally found to propagate in a one-to-one relation from the substrate into the epilayer. The same was observed for twins. Impurity inhomogeneities in the substrate, such as growth striations and extended atmospheres around grown-in dislocations, have no noticeable influence on the epilayer structure. Microdefects, both in the bulk matrix and along grown-in dislocations, can produce a multiple of epilayer dislocations. Heavily indium-doped substrates lead to the formation of networks of misfit dislocations." @default.
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- W1969594671 date "1988-04-01" @default.
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- W1969594671 title "Influence of substrate defects on the structure of epitaxial GaAs grown by MOCVD" @default.
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- W1969594671 doi "https://doi.org/10.1016/0022-0248(88)90279-5" @default.
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