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• W1969599510 abstract "Nitrogen doped 4H–SiC and 6H–SiC epitaxial layers with net doping concentration of 1.5×1015 cm−3 were implanted with either Al, B, or Ar ions at 600 °C. The energy of the ions was 160 keV and at a dose of 2×1016 cm−2. After annealing at 1600 °C for 5–60 min, Schottky diodes were fabricated on the samples. The measured junction capacitance of ion implanted samples varies with both temperature and frequency. The thermal activation energy determined from the frequency break ωB ranges from 183 to 202 meV. The Ar implanted samples remain n-type and show no capacitive dispersion. Similarly, the junction capacitance of samples doped with Al does not exhibit dispersion. It is suggested that the implantation induced defects play a role in the observed dispersion. The data show that the series resistance is insignificant and does not account for the observed dispersion." @default.
• W1969599510 created "2016-06-24" @default.
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• W1969599510 date "2002-10-01" @default.
• W1969599510 modified "2023-09-24" @default.
• W1969599510 title "Capacitance dispersion in ion implanted 4H and 6H-silicon carbide" @default.
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• W1969599510 doi "https://doi.org/10.1063/1.1505692" @default.
• W1969599510 hasPublicationYear "2002" @default.
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