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• W1969613447 abstract "Abstract The rapid growth of the optoelectronic and microwave industries and their performance requirements have increased the demand for more sophisticated device structures and greater process yields. These demands are being met by increasingly complex thinner epitaxial structures grown from more exotic materials using more sophisticated techniques. Until recently, semiconductor manufacturers have employed either liquid or vapor phase growth to meet their epitaxy needs. The increasing constraints of the evolving device technology have spurred on the development of the molecular beam epitaxy (MBE) process. The basic MBE process achieves epitaxial growth in an ultrahigh vacuum environment through the reaction of multiple molecular beams of differing intensities and chemistries with a heated monocrystal substrate. It provides the device engineer, for the first time, with control over the host lattice and dopant material profiles on an atomic scale in the direction of growth. Recent work in microwave devices and heterojunction injection lasers unequivocably confirms that MBE can in fact achieve state-of-the-art results in both majority and minority carrier devices. It is now a question of which market segments MBE will serve. In this paper we illustrate recent progress in MBE which is contributing to its acceptance as a commercial epitaxy technology. III–V compound semiconductors are dealt with exclusively since the majority of the significant work to date has been achieved with these versatile materials. The MBE process and its implementation in production is briefly described. Specific microwave field effect transistor and double-heterojunction injection laser structures grown by MBE are used to illustrate its unique and most significant aspects. The potential for device integration utilizing MBE is addressed." @default.
• W1969613447 created "2016-06-24" @default.
• W1969613447 creator A5084513240 @default.
• W1969613447 date "1981-09-01" @default.
• W1969613447 modified "2023-09-26" @default.
• W1969613447 title "Molecular beam epitaxy: An emerging epitaxy technology" @default.
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• W1969613447 doi "https://doi.org/10.1016/0040-6090(81)90659-3" @default.
• W1969613447 hasPublicationYear "1981" @default.
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