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- W1969614910 abstract "The pinning effect of punched-out dislocations in carbon-, nitrogen- or boron-doped Czochralski-grown silicon wafers was investigated using an indentation method. The size of a rosette pattern which corresponds to the distance of dislocation movement was measured after heat-treatment without any thermal stress. It was found that the rosette size decreased by carbon, nitrogen and boron doping with a concentration of 2.0×10 16 –1.4×10 17 , 5.3×10 13 –5.3×10 14 and 2.0×10 18 –2.0×10 19 atoms/cm 3 , respectively. The rosette size was approximately proportional to the power -1/3 of carbon, -1/10 of nitrogen and -1/10 of boron concentration, which differed from the reported power of -2/3 of oxygen concentration." @default.
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- W1969614910 date "2001-03-01" @default.
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- W1969614910 title "Pinning Effect of Punched-Out Dislocations in Carbon-, Nitrogen- or Boron-Doped Silicon Wafers" @default.
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- W1969614910 doi "https://doi.org/10.1143/jjap.40.1240" @default.
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