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• W1969747435 abstract "Kohlrausch’s stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1−xTex. As the Te concentration increases, the stretching exponent β initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth." @default.
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• W1969747435 date "2008-12-15" @default.
• W1969747435 modified "2023-10-18" @default.
• W1969747435 title "Time-resolved photoluminescence of isoelectronic traps in ZnSe1−xTex semiconductor alloys" @default.
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• W1969747435 doi "https://doi.org/10.1063/1.3054162" @default.
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