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• W1969792920 abstract "Isochronal annealing of as received aluminium wires of commercial purity is carried out from room temperature up to 600 °C. The results show the existence of two annealing stages, one from room temperature up to 300 °C and the other from 300 °C upwards. The first annealing stage with an activation energy of 0.2 eV is interpreted by vacancy-silicon binding energy and clustering of Si atoms on grain boundaries. The second annealing stage is proved to be a multi-energy stage with an activation energy ranging between 0.36 and 0.80 eV, this is in agreement with that for the Si diffusion in the aluminium matrix during the recrystallization process. The wires are then subjected to combined tensile-torsion deformation. The results show (i) negative tensile strain (−ΔL/L) i.e. contraction for samples annealed over the temperature range of the first annealing stage. This behaviour is inferred to hardening due to internal stresses formed on clustering of Si atoms at grain boundaries, as well as the formation of Lüders bands at the grain boundaries during twisting, (ii) normal positive tensile strain (+ΔL/L) for samples annealed over the temperature range of the second annealing stage. This behaviour is attributed to the decrease in the internal stresses; because annealing at these relatively high temperatures (above 300 °C) leads to the diffusion of Si atoms collected at grain boundaries — at the first annealing stage — in the matrix. Un recuit isochronal a été effectué pour l'aluminium de la température ambiante jusqu' à 600 °C. Les résultats obtenus montrent que le recuit s'effectue en deux étapes; la première de la température ambiante à 300 °C, et la deuzième au delà de 300 °C. Pendant la première étape l'énergie d'activation est égale à 0,2 eV interprétée comme étant l'énergie de liaison de silicium-lacune et de rassemblement d'atomes de Si les sur joints de grains. Tandis que pour la deuzième étape l'énergie d'activation n'est pas constante; elle est de 0,36 à 0,80 eV en accord avec celle de diffusion de Si dans la matrice d'aluminium pendant le processus de recristallisation. Des échantillons prealablement recuit sont sounds à la déformation en torsion-traction. Les résultats obtenus montrent: (i) une déformation detraction negative ( −ΔL/L) dans le domaine de la première étape. Ce comportement est attribué au durcissement dǔ aux contraintes internes produites par le rassemblement des atomes de Si sur les joints de grains aussi que par la formation des bandes de Lüder pendant torsion; (ii) une deformation de traction normale ( +ΔL/L) pour les échantillon prérecuits pour la deuzieme étape. Ce comportement est attribué à la diminution des contraintes internes; le recuit à ces températures provoquera la diffusion des atomes de Si rassemblés sur les joints de grains (pendant la première étape de recuit) dans la matrice." @default.
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• W1969792920 date "1987-07-16" @default.
• W1969792920 modified "2023-10-14" @default.
• W1969792920 title "Plastic Behaviour of Polycrystalline Al−0.72 wt% Si" @default.
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• W1969792920 doi "https://doi.org/10.1002/pssa.2211020127" @default.
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