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- W1969800180 abstract "Photoluminescence (PL) observation of CdSe/ZnS nanocrystals with multi-wavelength was performed in order to demonstrate the visualization of the underlying insulator patterns (GaAsOx/GaAs) and the estimation of insulator thickness. The CdSe PL intensity depends much on the excitation wavelength and insulator thickness, due to the multi-reflection/interference effects, which brings to the estimation of thickness (and/or refractive index) of insulators. The decrease and blue shift of CdSe PL peak on GaAsOx/GaAs also depend on the excitation wavelength but with different time evolutions, showing that the excitation photon energy is the important factor for the degradation/oxidation of CdSe nanocrystals and that the mechanism of the photo-induced defect-formation differs from that of photo-induced confinement-energy increase." @default.
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- W1969800180 date "2005-03-01" @default.
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- W1969800180 title "Photoluminescence behavior of CdSe on GaAsOx/GaAs substrates" @default.
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- W1969800180 doi "https://doi.org/10.1016/j.mejo.2005.02.079" @default.
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