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- W1969842917 abstract "Anodic oxidation of thin Al films on GaAs beyond the exhaustion point is shown to induce substrate GaAs migration into and through the Al oxide layer. Continued anodization results in a triple-layer structure composed of a surface GaAs oxide layer superimposed on top of a mixed Al oxide layer on a substrate GaAs oxide layer. The thicknesses and composition of these Al/GaAs composite oxides are measured using Rutherford backscattering spectrometry and are related to the specific final anodic voltages. The results show that, upon completion of the anodization of the Al layer, the Ga and or As ions drift under the action of the anodic field through the Al oxide. Eventually a new oxide is formed at the GaAs/oxide interface and also at the electrolyte/oxide interface in the ratio of 64:36." @default.
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- W1969842917 date "1989-03-15" @default.
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- W1969842917 title "Rutherford backscattering spectroscopy studies of ion transport in anodic oxides of Al/GaAs" @default.
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- W1969842917 doi "https://doi.org/10.1063/1.342819" @default.
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