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• W1969889710 abstract "It is widely believed that high-kinetic-energy (>1 keV) recoils in crystalline Si result in the formation of amorphous regions, whereas low-kinetic-energy recoils lead directly to isolated point defects. Here we study the response of a Si crystal using dynamical density-functional calculations and show that recoils of much less than 1 keV result in highly disordered regions that persist for hundreds of femtoseconds. Therefore, beam-induced defect formation is controlled by recrystallization processes during dynamic annealing even following low-energy ion implantation." @default.
• W1969889710 created "2016-06-24" @default.
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• W1969889710 date "2008-05-06" @default.
• W1969889710 modified "2023-09-26" @default.
• W1969889710 title "Disorder-Recrystallization Effects in Low-Energy Beam-Solid Interactions" @default.
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• W1969889710 doi "https://doi.org/10.1103/physrevlett.100.185502" @default.
• W1969889710 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/18518389" @default.
• W1969889710 hasPublicationYear "2008" @default.
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